An Indium-Free Transparent Resistive Switching Random Access Memory
Identifieur interne : 000952 ( Chine/Analysis ); précédent : 000951; suivant : 000953An Indium-Free Transparent Resistive Switching Random Access Memory
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Abstract
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">An Indium-Free Transparent Resistive Switching Random Access Memory</title><author><name sortKey="Zheng, K" uniqKey="Zheng K">K. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Sun, X W" uniqKey="Sun X">X. W. Sun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Applied Physics, College of Science, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300072</wicri:noRegion></affiliation></author><author><name sortKey="Zhao, J L" uniqKey="Zhao J">J. L. Zhao</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Applied Physics, College of Science, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300072</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y" uniqKey="Wang Y">Y. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Electronics Engineering and the Department of Physics, Bilkent University</s1><s2>Ankara 06800</s2><s3>TUR</s3><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara 06800</wicri:noRegion></affiliation></author><author><name sortKey="Yu, H Y" uniqKey="Yu H">H. Y. Yu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Demir, H V" uniqKey="Demir H">H. V. Demir</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 639798</wicri:noRegion></affiliation></author><author><name sortKey="Teo, K L" uniqKey="Teo K">K. L. Teo</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Department of Electrical and Computer Engineering, National University of Singapore</s1><s2>Singapore 117608</s2><s3>SGP</s3><sZ>7 aut.</sZ></inist:fA14><country>Singapour</country><orgName type="university">Université nationale de Singapour</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0275077</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0275077 INIST</idno><idno type="RBID">Pascal:11-0275077</idno><idno type="wicri:Area/Main/Corpus">003001</idno><idno type="wicri:Area/Main/Repository">003448</idno><idno type="wicri:Area/Chine/Extraction">000952</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrical conductivity transitions</term><term>Indium</term><term>Integrated circuit</term><term>MOCVD</term><term>Memory devices</term><term>Microelectronic fabrication</term><term>Random access memory</term><term>Retention factor</term><term>Room temperature</term><term>Transmittance</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mémoire accès direct</term><term>Méthode MOCVD</term><term>Dispositif à mémoire</term><term>Facteur transmission</term><term>Transition conductivité électrique</term><term>Facteur rétention</term><term>Température ambiante</term><term>Indium</term><term>Oxyde de zinc</term><term>Circuit intégré</term><term>Fabrication microélectronique</term><term>8115G</term><term>ZnO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report an indium-free transparent resistive switching random access memory device based on GZO-Ga<sub>2</sub>O<sub>3</sub>-ZnO-Ga<sub>2</sub>O<sub>3</sub>-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>32</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>An Indium-Free Transparent Resistive Switching Random Access Memory</s1></fA08><fA11 i1="01" i2="1"><s1>ZHENG (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUN (X. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHAO (J. L.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>YU (H. Y.)</s1></fA11><fA11 i1="06" i2="1"><s1>DEMIR (H. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>TEO (K. L.)</s1></fA11><fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1><s2>Singapore 639798</s2><s3>SGP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Applied Physics, College of Science, Tianjin University</s1><s2>Tianjin 300072</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Electronics Engineering and the Department of Physics, Bilkent University</s1><s2>Ankara 06800</s2><s3>TUR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical and Computer Engineering, National University of Singapore</s1><s2>Singapore 117608</s2><s3>SGP</s3><sZ>7 aut.</sZ></fA14><fA20><s1>797-799</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222V</s2><s5>354000192149240320</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0275077</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report an indium-free transparent resistive switching random access memory device based on GZO-Ga<sub>2</sub>O<sub>3</sub>-ZnO-Ga<sub>2</sub>O<sub>3</sub>-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F06B</s0></fC02><fC02 i1="02" i2="X"><s0>001D03I02</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F06A</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mémoire accès direct</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Random access memory</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Memoria acceso directo</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dispositif à mémoire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Memory devices</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Transmittance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Transition conductivité électrique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Electrical conductivity transitions</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Facteur rétention</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Retention factor</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Factor retención</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Température ambiante</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Room temperature</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Temperatura ambiente</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>22</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>22</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Indio</s0><s2>NC</s2><s5>22</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Circuit intégré</s0><s5>46</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Integrated circuit</s0><s5>46</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Circuito integrado</s0><s5>46</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>47</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>47</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>47</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Mémoire non volatile</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Non volatile memory</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Memoria no volátil</s0><s5>08</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Composé II-VI</s0><s5>09</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>II-VI compound</s0><s5>09</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Compuesto II-VI</s0><s5>09</s5></fC07><fN21><s1>185</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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